eng Ansari Education and Research Society Journal of Ultra Chemistry 0973-3450 2319-8036 April 2009 5 1 21 26 juc 673 article Anuar Kassim 1 Tan Wee Tee 1 Atan Mohd Sharif 1 Dzulkefly Kuang Abudllah 1 Md. Jelasa Haron 1 Ho Soon Min 1 Saravanan Nagalingam 2 Department of Chemistry, Faculty of Science, University Putra Malaysia, 43400 Serdang, Selangor (Malaysia) Department of Bio science and Chemistry, Faculty of Engineering and Science, Universtiy Tunku Abdul Rahman 53300Kuala Lumpur (Malaysia) <p>Thin films of Cu₄SnS₄ were grown by chemical bath deposition technique. The deposition parameters such as bath temperature (50 &deg;C), deposition time (120 min), electrolyte concentration (0.05 M) and bath pH (pH 1.5) were optimized to obtain good quality of films. The thin films were characterized using X-ray diffraction and atomic force microscopy in order to study the structural and surface morphological properties. The band gap energy, transition type and absorption properties were determined using UV-Vis Spectrophotometer. The X-ray diffraction analysis showed the presence of polycrystalline in nature and the most intense peak occurred at 2q = 30.2&deg; which belongs to (221) plane of Cu₄SnS₄. Atomic force microscopy image reveals that grains are uniformly distributed over the surface of substrate. An optical absorption study shows the presence of direct transition with band gap energy of 1.6 eV.</p> <p>&nbsp;</p> <p>&nbsp;</p> https://journalofchemistry.org/paper/673/ chemical bath deposition semiconducting material solar cells thin films